BSC0911ND

SKU: 95830

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 25V 18A/30A T/R

10 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	25
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	30@Q 2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	500@Q 2
Maximum Drain Source Resistance (mOhm)	1.2@10V@Q 2
Typical Gate Charge @ Vgs (nC)	25@4.5V@Q2
Typical Input Capacitance @ Vds (pF)	3800@12V@Q 2
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	4@Q 2
Typical Rise Time (ns)	5.4@Q 2
Typical Turn-Off Delay Time (ns)	25@Q 2
Typical Turn-On Delay Time (ns)	3.8@Q 2
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	25
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	30@Q 2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	500@Q 2
Maximum Drain Source Resistance (mOhm)	1.2@10V@Q 2
Typical Gate Charge @ Vgs (nC)	25@4.5V@Q2
Typical Input Capacitance @ Vds (pF)	3800@12V@Q 2
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	4@Q 2
Typical Rise Time (ns)	5.4@Q 2
Typical Turn-Off Delay Time (ns)	25@Q 2
Typical Turn-On Delay Time (ns)	3.8@Q 2
Operating Temperature-Min	-55
Operating Temperature-Max	150