BSC014N04LSI

SKU: 81719

Manufacturer: Infineon Technologies AG

Power-MOSFET, 40V

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	500
Maximum Drain Source Resistance (mOhm)	1.45@10V
Typical Gate Charge @ Vgs (nC)	29@4.5V
Typical Gate Charge @ 10V (nC)	55
Typical Gate to Drain Charge (nC)	8.9
Typical Gate to Source Charge (nC)	9.9
Typical Reverse Recovery Charge (nC)	20
Typical Switch Charge (nC)	12
Typical Input Capacitance @ Vds (pF)	4000@20V
Typical Reverse Transfer Capacitance @ Vds (pF)	90@20V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	1200
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	11
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	55
Typical Turn-On Delay Time (ns)	16
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	780
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.56
Typical Gate Plateau Voltage (V)	2.5
Maximum Diode Forward Voltage (V)	0.7
Minimum Gate Resistance (Ohm)	0.45
Maximum Gate Resistance (Ohm)	1.8
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	31
Original Package	TDSON EP
Pin Count	8
Terminal Form	Surface Mount
Package Height	1.1(Max)
Package Length	5
Package Width	6

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	500
Maximum Drain Source Resistance (mOhm)	1.45@10V
Typical Gate Charge @ Vgs (nC)	29@4.5V
Typical Gate Charge @ 10V (nC)	55
Typical Gate to Drain Charge (nC)	8.9
Typical Gate to Source Charge (nC)	9.9
Typical Reverse Recovery Charge (nC)	20
Typical Switch Charge (nC)	12
Typical Input Capacitance @ Vds (pF)	4000@20V
Typical Reverse Transfer Capacitance @ Vds (pF)	90@20V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	1200
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	11
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	55
Typical Turn-On Delay Time (ns)	16
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	780
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.56
Typical Gate Plateau Voltage (V)	2.5
Maximum Diode Forward Voltage (V)	0.7
Minimum Gate Resistance (Ohm)	0.45
Maximum Gate Resistance (Ohm)	1.8
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	31
Original Package	TDSON EP
Pin Count	8
Terminal Form	Surface Mount
Package Height	1.1(Max)
Package Length	5
Package Width	6