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    AUIRFS8409

    SKU: 138312
    Manufacturer: Infineon Technologies AG
    AUIRFS8409 Infineon Technologies AG Transistors MOSFETs N-CH Si 40V 409A Automotive 3-Pin(2+Tab) D2PAK Tube Si - Arrow.com
    160 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.9
    Maximum Continuous Drain Current (A) 409
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 1.2@10V
    Typical Gate Charge @ Vgs (nC) 300@10V
    Typical Gate Charge @ 10V (nC) 300
    Typical Input Capacitance @ Vds (pF) 14240@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 100
    Typical Rise Time (ns) 105
    Typical Turn-Off Delay Time (ns) 160
    Typical Turn-On Delay Time (ns) 32
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Supplier Temperature Grade Automotive
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 195
    Typical Gate Threshold Voltage (V) 10
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 2
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Body Material Si
    Configuration Single
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.9
    Maximum Continuous Drain Current (A) 409
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 1.2@10V
    Typical Gate Charge @ Vgs (nC) 300@10V
    Typical Gate Charge @ 10V (nC) 300
    Typical Input Capacitance @ Vds (pF) 14240@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 100
    Typical Rise Time (ns) 105
    Typical Turn-Off Delay Time (ns) 160
    Typical Turn-On Delay Time (ns) 32
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Supplier Temperature Grade Automotive
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 195
    Typical Gate Threshold Voltage (V) 10
    Pin Count 3
    Standard Package Method TO-263
    Original Package D2PAK
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 2
    Tab Tab