EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single Hex Drain Hex Source |
Process Technology
|
DirectFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
40 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
31 |
Maximum Drain Source Resistance (mOhm)
|
1.9@10V |
Typical Gate Charge @ Vgs (nC)
|
89@10V |
Typical Gate Charge @ 10V (nC)
|
89 |
Typical Input Capacitance @ Vds (pF)
|
5469@25V |
Maximum Power Dissipation (mW)
|
3300 |
Typical Fall Time (ns)
|
14 |
Typical Rise Time (ns)
|
19 |
Typical Turn-Off Delay Time (ns)
|
22 |
Typical Turn-On Delay Time (ns)
|
12 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Supplier Temperature Grade
|
Automotive |
Packing Method
|
Tape and Reel |
Original Package
|
Direct-FET L6 |
Pin Count
|
13 |
Terminal Form
|
Surface Mount |
Package Height
|
0.49(Max) |
Package Length
|
7.85(Max) |
Package Width
|
7.1(Max) |
PCB changed
|
13 |