EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Dual Dual Drain |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
6.5@N Channel |
Maximum Drain Source Resistance (mOhm)
|
29@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
23@10V@P Channel |
Typical Gate Charge @ 10V (nC)
|
22@N Channel |
Typical Input Capacitance @ Vds (pF)
|
650@25V@N Channel |
Maximum Power Dissipation (mW)
|
2000 |
Typical Fall Time (ns)
|
32@P Channel |
Typical Rise Time (ns)
|
13@P Channel |
Typical Turn-Off Delay Time (ns)
|
26@N Channel |
Typical Turn-On Delay Time (ns)
|
13@P Channel |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Supplier Temperature Grade
|
Automotive |
Packing Method
|
Tape and Reel |
Pin Count
|
8 |
Standard Package Method
|
SOP |
Original Package
|
SOIC |
Terminal Form
|
Surface Mount |
Package Height
|
1.5(Max) |
Package Length
|
5(Max) |
Package Width
|
4(Max) |
PCB changed
|
8 |