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    AUIRF7319Q

    SKU: 86663
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N/P-CH Si 30V 6.5A/4.9A Automotive 8-Pin SOIC T/R
    20770 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Continuous Drain Current (A) 6.5@N Channel
    Maximum Drain Source Resistance (mOhm) 29@10V@N Channel
    Typical Gate Charge @ Vgs (nC) 23@10V@P Channel
    Typical Gate Charge @ 10V (nC) 22@N Channel
    Typical Input Capacitance @ Vds (pF) 650@25V@N Channel
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 32@P Channel
    Typical Rise Time (ns) 13@P Channel
    Typical Turn-Off Delay Time (ns) 26@N Channel
    Typical Turn-On Delay Time (ns) 13@P Channel
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Supplier Temperature Grade Automotive
    Packing Method Tape and Reel
    Pin Count 8
    Standard Package Method SOP
    Original Package SOIC
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual Dual Drain
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Continuous Drain Current (A) 6.5@N Channel
    Maximum Drain Source Resistance (mOhm) 29@10V@N Channel
    Typical Gate Charge @ Vgs (nC) 23@10V@P Channel
    Typical Gate Charge @ 10V (nC) 22@N Channel
    Typical Input Capacitance @ Vds (pF) 650@25V@N Channel
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 32@P Channel
    Typical Rise Time (ns) 13@P Channel
    Typical Turn-Off Delay Time (ns) 26@N Channel
    Typical Turn-On Delay Time (ns) 13@P Channel
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Supplier Temperature Grade Automotive
    Packing Method Tape and Reel
    Pin Count 8
    Standard Package Method SOP
    Original Package SOIC
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8