EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
55 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
175 |
Maximum Drain Source Resistance (mOhm)
|
4.7@10V |
Typical Gate Charge @ Vgs (nC)
|
150@10V |
Typical Gate Charge @ 10V (nC)
|
150 |
Typical Input Capacitance @ Vds (pF)
|
5110@25V |
Maximum Power Dissipation (mW)
|
330000 |
Typical Fall Time (ns)
|
110 |
Typical Rise Time (ns)
|
120 |
Typical Turn-Off Delay Time (ns)
|
68 |
Typical Turn-On Delay Time (ns)
|
14 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Supplier Temperature Grade
|
Automotive |
Packing Method
|
Tube |
Pin Count
|
3 |
Standard Package Method
|
TO-220 |
Original Package
|
TO-220AB |
Terminal Form
|
Through Hole |
Package Height
|
9.02(Max) |
Package Length
|
10.67(Max) |
Package Width
|
4.83(Max) |
PCB changed
|
3 |
Tab
|
Tab |