EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Process Technology
|
HEXFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
100 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
6 |
Maximum Drain Source Resistance (mOhm)
|
350@10V |
Typical Gate Charge @ Vgs (nC)
|
18(Max)@10V |
Typical Gate Charge @ 10V (nC)
|
18(Max) |
Typical Input Capacitance @ Vds (pF)
|
350@25V |
Maximum Power Dissipation (mW)
|
20000 |
Typical Fall Time (ns)
|
70(Max) |
Typical Rise Time (ns)
|
70(Max) |
Typical Turn-Off Delay Time (ns)
|
40(Max) |
Typical Turn-On Delay Time (ns)
|
40(Max) |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Supplier Temperature Grade
|
Military |
Original Package
|
TO-39 |
Pin Count
|
3 |
Standard Package Method
|
TO-205-AF |
Diameter
|
9.22(Max) |
Terminal Form
|
Through Hole |
Package Height
|
4.54(Max) |
PCB changed
|
3 |