|
EU RoHS
|
Not Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.29.00.95 |
|
SVHC
|
Yes |
|
SVHC Exceeds Threshold
|
Yes |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Process Technology
|
HEXFET |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
100 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Continuous Drain Current (A)
|
6 |
|
Maximum Drain Source Resistance (mOhm)
|
350@10V |
|
Typical Gate Charge @ Vgs (nC)
|
18(Max)@10V |
|
Typical Gate Charge @ 10V (nC)
|
18(Max) |
|
Typical Input Capacitance @ Vds (pF)
|
350@25V |
|
Maximum Power Dissipation (mW)
|
20000 |
|
Typical Fall Time (ns)
|
70(Max) |
|
Typical Rise Time (ns)
|
70(Max) |
|
Typical Turn-Off Delay Time (ns)
|
40(Max) |
|
Typical Turn-On Delay Time (ns)
|
40(Max) |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Supplier Temperature Grade
|
Military |
|
Original Package
|
TO-39 |
|
Pin Count
|
3 |
|
Standard Package Method
|
TO-205-AF |
|
Diameter
|
9.22(Max) |
|
Terminal Form
|
Through Hole |
|
Package Height
|
4.54(Max) |
|
PCB changed
|
3 |