PT928-6C-6-2

SKU: 70655

Manufacturer: EVERLIGHT Electronics Co., Ltd

Phototransistor IR Chip Silicon 860nm

3940 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Type	IR Chip
Phototransistor Type	Phototransistor
Lens Shape Type	Domed
Lens Color	Water Clear
Body Material	Silicon
Number of Channels per Chip	1
Polarity	NPN
Viewing Orientation	Side View
Peak Wavelength (nm)	860
Maximum Rise Time (ns)	15000(Typ)
Maximum Fall Time (ns)	15000(Typ)
Maximum Light Current (uA)	3480
Maximum Collector Current (mA)	20
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	5
Collector-Emitter Voltage-Max (V)	30
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Power Dissipation (mW)	75
Fabrication Technology	NPN Transistor
Operating Temperature-Min	-25

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Type	IR Chip
Phototransistor Type	Phototransistor
Lens Shape Type	Domed
Lens Color	Water Clear
Body Material	Silicon
Number of Channels per Chip	1
Polarity	NPN
Viewing Orientation	Side View
Peak Wavelength (nm)	860
Maximum Rise Time (ns)	15000(Typ)
Maximum Fall Time (ns)	15000(Typ)
Maximum Light Current (uA)	3480
Maximum Collector Current (mA)	20
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	5
Collector-Emitter Voltage-Max (V)	30
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Power Dissipation (mW)	75
Fabrication Technology	NPN Transistor
Operating Temperature-Min	-25