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    PT334-6C

    SKU: 155622
    Phototransistor Chip Silicon 860nm 2-Pin T-1 3/4 Bag
    13630 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.40.70.80
    Automotive No
    PPAP No
    Type Chip
    Phototransistor Type Phototransistor
    Lens Shape Type Domed
    Lens Color Water Clear
    Body Material Silicon
    Number of Channels per Chip 1
    Polarity NPN
    Viewing Orientation Top View
    Peak Wavelength (nm) 860
    Maximum Rise Time (ns) 15000(Typ)
    Maximum Fall Time (ns) 15000(Typ)
    Maximum Light Current (uA) 3000(Typ)
    Maximum Collector Current (mA) 20
    Maximum Dark Current (nA) 100
    Maximum Emitter-Collector Voltage (V) 5
    Collector-Emitter Voltage-Max (V) 30
    Maximum Collector-Emitter Saturation Voltage (V) 0.4
    Maximum Power Dissipation (mW) 100
    Fabrication Technology NPN Transistor
    Operating Temperature-Min -25
    Operating Temperature-Max 85
    Packing Method Bag
    Standard Package Method T-1 3/4
    Original Package T-1 3/4
    Pin Count 2
    Diameter 6
    Terminal Form Through Hole
    Package Height 8.6
    PCB changed 2
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.40.70.80
    Automotive No
    PPAP No
    Type Chip
    Phototransistor Type Phototransistor
    Lens Shape Type Domed
    Lens Color Water Clear
    Body Material Silicon
    Number of Channels per Chip 1
    Polarity NPN
    Viewing Orientation Top View
    Peak Wavelength (nm) 860
    Maximum Rise Time (ns) 15000(Typ)
    Maximum Fall Time (ns) 15000(Typ)
    Maximum Light Current (uA) 3000(Typ)
    Maximum Collector Current (mA) 20
    Maximum Dark Current (nA) 100
    Maximum Emitter-Collector Voltage (V) 5
    Collector-Emitter Voltage-Max (V) 30
    Maximum Collector-Emitter Saturation Voltage (V) 0.4
    Maximum Power Dissipation (mW) 100
    Fabrication Technology NPN Transistor
    Operating Temperature-Min -25
    Operating Temperature-Max 85
    Packing Method Bag
    Standard Package Method T-1 3/4
    Original Package T-1 3/4
    Pin Count 2
    Diameter 6
    Terminal Form Through Hole
    Package Height 8.6
    PCB changed 2