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    PT1302B/C2

    SKU: 63648
    Phototransistor Chip Silicon 980nm 2-Pin T-1 3/4 Bag
    21070 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Unconfirmed
    HTS 8541.40.95.00
    Automotive No
    PPAP No
    Type Chip
    Phototransistor Type Phototransistor
    Lens Shape Type Domed
    Lens Color Black
    Body Material Silicon
    Number of Channels per Chip 1
    Polarity NPN
    Viewing Orientation Top View
    Peak Wavelength (nm) 980
    Maximum Rise Time (ns) 15000(Typ)
    Maximum Fall Time (ns) 15000(Typ)
    Maximum Light Current (uA) 1000(Typ)
    Maximum Collector Current (mA) 20
    Maximum Dark Current (nA) 100
    Maximum Emitter-Collector Voltage (V) 5
    Collector-Emitter Voltage-Max (V) 30
    Maximum Collector-Emitter Saturation Voltage (V) 0.4
    Maximum Power Dissipation (mW) 75
    Fabrication Technology NPN Transistor
    Operating Temperature-Min -25
    Operating Temperature-Max 85
    Packing Method Bag
    Standard Package Method T-1 3/4
    Original Package T-1 3/4
    Pin Count 2
    Terminal Form Through Hole
    Package Height 8.5
    Package Length 4.6
    Package Width 4.6
    PCB changed 2
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Unconfirmed
    HTS 8541.40.95.00
    Automotive No
    PPAP No
    Type Chip
    Phototransistor Type Phototransistor
    Lens Shape Type Domed
    Lens Color Black
    Body Material Silicon
    Number of Channels per Chip 1
    Polarity NPN
    Viewing Orientation Top View
    Peak Wavelength (nm) 980
    Maximum Rise Time (ns) 15000(Typ)
    Maximum Fall Time (ns) 15000(Typ)
    Maximum Light Current (uA) 1000(Typ)
    Maximum Collector Current (mA) 20
    Maximum Dark Current (nA) 100
    Maximum Emitter-Collector Voltage (V) 5
    Collector-Emitter Voltage-Max (V) 30
    Maximum Collector-Emitter Saturation Voltage (V) 0.4
    Maximum Power Dissipation (mW) 75
    Fabrication Technology NPN Transistor
    Operating Temperature-Min -25
    Operating Temperature-Max 85
    Packing Method Bag
    Standard Package Method T-1 3/4
    Original Package T-1 3/4
    Pin Count 2
    Terminal Form Through Hole
    Package Height 8.5
    Package Length 4.6
    Package Width 4.6
    PCB changed 2