DMT6018LDR-7

SKU: 124670

Manufacturer: Diodes Incorporated

Trans MOSFET N-CH 60V 8.8A T/R

15750 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8538.90.81.40
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Triple Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	8.8
Maximum Drain Source Resistance (mOhm)	17@10V
Typical Gate Charge @ Vgs (nC)	6.2@4.5V
Typical Gate Charge @ 10V (nC)	13.9
Typical Input Capacitance @ Vds (pF)	869@30V
Maximum Power Dissipation (mW)	1900
Typical Fall Time (ns)	3.5
Typical Rise Time (ns)	4.6
Typical Turn-Off Delay Time (ns)	10.8
Typical Turn-On Delay Time (ns)	3.5
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8538.90.81.40
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Triple Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	8.8
Maximum Drain Source Resistance (mOhm)	17@10V
Typical Gate Charge @ Vgs (nC)	6.2@4.5V
Typical Gate Charge @ 10V (nC)	13.9
Typical Input Capacitance @ Vds (pF)	869@30V
Maximum Power Dissipation (mW)	1900
Typical Fall Time (ns)	3.5
Typical Rise Time (ns)	4.6
Typical Turn-Off Delay Time (ns)	10.8
Typical Turn-On Delay Time (ns)	3.5
Operating Temperature-Min	-55
Operating Temperature-Max	150