DMT6013LFDF-7

SKU: 117609

Manufacturer: Diodes Incorporated

Trans MOSFET N-CH 60V 10A T/R

1150 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	10
Maximum Drain Source Resistance (mOhm)	15@10V
Typical Gate Charge @ Vgs (nC)	8.5@4.5V
Typical Gate Charge @ 10V (nC)	15
Typical Input Capacitance @ Vds (pF)	1081@30V
Maximum Power Dissipation (mW)	1900
Typical Fall Time (ns)	6.1
Typical Rise Time (ns)	6.5
Typical Turn-Off Delay Time (ns)	15.8
Typical Turn-On Delay Time (ns)	4.3
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	10
Maximum Drain Source Resistance (mOhm)	15@10V
Typical Gate Charge @ Vgs (nC)	8.5@4.5V
Typical Gate Charge @ 10V (nC)	15
Typical Input Capacitance @ Vds (pF)	1081@30V
Maximum Power Dissipation (mW)	1900
Typical Fall Time (ns)	6.1
Typical Rise Time (ns)	6.5
Typical Turn-Off Delay Time (ns)	15.8
Typical Turn-On Delay Time (ns)	4.3
Operating Temperature-Min	-55
Operating Temperature-Max	150