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    DMP3056L-7

    SKU: 153099
    Manufacturer: Diodes Incorporated
    Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
    4680 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 2.1
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.3
    Maximum Gate Source Leakage Current (nA) 800
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 50@10V
    Typical Gate Charge @ Vgs (nC) 11.8@10V
    Typical Gate Charge @ 10V (nC) 11.8
    Typical Gate to Drain Charge (nC) 2.4@15V
    Typical Gate to Source Charge (nC) 2
    Typical Input Capacitance @ Vds (pF) 642@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 48@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 65
    Maximum Power Dissipation (mW) 1380
    Typical Fall Time (ns) 18.2
    Typical Rise Time (ns) 4.7
    Typical Turn-Off Delay Time (ns) 35.2
    Typical Turn-On Delay Time (ns) 4.9
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 25
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 4.3
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.38
    Maximum Pulsed Drain Current @ TC=25°C (A) 20
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 91
    Typical Gate Plateau Voltage (V) 3.5
    Maximum Diode Forward Voltage (V) 1.2
    Original Package SOT-23
    Pin Count 3
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 0.98
    Package Length 2.9
    Package Width 1.3
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 2.1
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.3
    Maximum Gate Source Leakage Current (nA) 800
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 50@10V
    Typical Gate Charge @ Vgs (nC) 11.8@10V
    Typical Gate Charge @ 10V (nC) 11.8
    Typical Gate to Drain Charge (nC) 2.4@15V
    Typical Gate to Source Charge (nC) 2
    Typical Input Capacitance @ Vds (pF) 642@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 48@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 65
    Maximum Power Dissipation (mW) 1380
    Typical Fall Time (ns) 18.2
    Typical Rise Time (ns) 4.7
    Typical Turn-Off Delay Time (ns) 35.2
    Typical Turn-On Delay Time (ns) 4.9
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 25
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 4.3
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.38
    Maximum Pulsed Drain Current @ TC=25°C (A) 20
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 91
    Typical Gate Plateau Voltage (V) 3.5
    Maximum Diode Forward Voltage (V) 1.2
    Original Package SOT-23
    Pin Count 3
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 0.98
    Package Length 2.9
    Package Width 1.3
    PCB changed 3