EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
LTB |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
12 |
Maximum Continuous Drain Current (A)
|
3.2 |
Maximum Drain Source Resistance (mOhm)
|
69@8V |
Typical Gate Charge @ Vgs (nC)
|
1.09@4.5V |
Typical Input Capacitance @ Vds (pF)
|
110@15V |
Maximum Power Dissipation (mW)
|
1380 |
Typical Fall Time (ns)
|
9.5 |
Typical Rise Time (ns)
|
2.8 |
Typical Turn-Off Delay Time (ns)
|
16.5 |
Typical Turn-On Delay Time (ns)
|
4.8 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
X2-DSN |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
0.24 |
Package Length
|
0.6 |
Package Width
|
1 |