DMN21D2UFB-7

SKU: 11419

Manufacturer: Diodes Incorporated

Trans MOSFET N-CH 20V 0.76A T/R

1100 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Automotive	No
PPAP	No
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1
Maximum Continuous Drain Current (A)	0.76
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	0.1
Maximum Drain Source Resistance (mOhm)	990@4.5V
Typical Gate Charge @ Vgs (nC)	0.41@10V
Typical Gate Charge @ 10V (nC)	0.41
Typical Input Capacitance @ Vds (pF)	27.6@16V
Maximum Power Dissipation (mW)	900
Typical Fall Time (ns)	9.8
Typical Rise Time (ns)	4.2
Typical Turn-Off Delay Time (ns)	19.6
Typical Turn-On Delay Time (ns)	3.5
Operating Temperature-Min	-55
Operating Temperature-Max	150
Supplier Temperature Grade	Automotive

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Automotive	No
PPAP	No
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1
Maximum Continuous Drain Current (A)	0.76
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	0.1
Maximum Drain Source Resistance (mOhm)	990@4.5V
Typical Gate Charge @ Vgs (nC)	0.41@10V
Typical Gate Charge @ 10V (nC)	0.41
Typical Input Capacitance @ Vds (pF)	27.6@16V
Maximum Power Dissipation (mW)	900
Typical Fall Time (ns)	9.8
Typical Rise Time (ns)	4.2
Typical Turn-Off Delay Time (ns)	19.6
Typical Turn-On Delay Time (ns)	3.5
Operating Temperature-Min	-55
Operating Temperature-Max	150
Supplier Temperature Grade	Automotive