2N7002-13-01-F

SKU: 6660

Manufacturer: Diodes Incorporated

Trans MOSFET N-CH 60V 0.21A T/R

480 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Small Signal
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	0.21
Maximum Drain Source Resistance (mOhm)	5000@10V
Typical Gate Charge @ Vgs (nC)	0.223@4.5V
Typical Input Capacitance @ Vds (pF)	22@25V
Maximum Power Dissipation (mW)	540
Typical Fall Time (ns)	5.6
Typical Rise Time (ns)	3
Typical Turn-Off Delay Time (ns)	7.6
Typical Turn-On Delay Time (ns)	2.8
Operating Temperature-Min	-55
Operating Temperature-Max	150

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Small Signal
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	0.21
Maximum Drain Source Resistance (mOhm)	5000@10V
Typical Gate Charge @ Vgs (nC)	0.223@4.5V
Typical Input Capacitance @ Vds (pF)	22@25V
Maximum Power Dissipation (mW)	540
Typical Fall Time (ns)	5.6
Typical Rise Time (ns)	3
Typical Turn-Off Delay Time (ns)	7.6
Typical Turn-On Delay Time (ns)	2.8
Operating Temperature-Min	-55
Operating Temperature-Max	150