2N4036

SKU: 8855

Manufacturer: Central Semiconductor

Trans GP BJT PNP 65V 1A 1000mW 3-Pin TO-39 Box

930 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.75
Automotive	No
PPAP	No
Type	PNP
Product Category	Bipolar Power
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	90
Collector-Emitter Voltage-Max (V)	65
Maximum Emitter Base Voltage (V)	7
Operating Junction Temperature (°C)	-65 to 200
Maximum Base Current (A)	0.5
Maximum Collector-Emitter Saturation Voltage (V)	0.65@15mA@150mA
Maximum DC Collector Current (A)	1
Maximum Collector Cut-Off Current (nA)	1000
Minimum DC Current Gain	20@0.1mA@10V
Maximum Power Dissipation (mW)	1000
Maximum Transition Frequency (MHz)	60(Min)
Operating Temperature-Min	-65
Operating Temperature-Max	200
Packing Method	Box
Original Package	TO-39
Pin Count	3
Standard Package Method	TO-205-AF
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3

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Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.75
Automotive	No
PPAP	No
Type	PNP
Product Category	Bipolar Power
Body Material	Si
Configuration	Single
Number of Elements per pcs	1
Collector Base Voltage-Max (V)	90
Collector-Emitter Voltage-Max (V)	65
Maximum Emitter Base Voltage (V)	7
Operating Junction Temperature (°C)	-65 to 200
Maximum Base Current (A)	0.5
Maximum Collector-Emitter Saturation Voltage (V)	0.65@15mA@150mA
Maximum DC Collector Current (A)	1
Maximum Collector Cut-Off Current (nA)	1000
Minimum DC Current Gain	20@0.1mA@10V
Maximum Power Dissipation (mW)	1000
Maximum Transition Frequency (MHz)	60(Min)
Operating Temperature-Min	-65
Operating Temperature-Max	200
Packing Method	Box
Original Package	TO-39
Pin Count	3
Standard Package Method	TO-205-AF
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3