EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
Unknown |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
AlphaMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
600 |
Maximum Gate Source Voltage (V)
|
±30 |
Maximum Gate Threshold Voltage (V)
|
3.8 |
Maximum Continuous Drain Current (A)
|
37 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
109@10V |
Typical Gate Charge @ Vgs (nC)
|
40@10V |
Typical Gate Charge @ 10V (nC)
|
40 |
Typical Input Capacitance @ Vds (pF)
|
2154@100V |
Maximum Power Dissipation (mW)
|
417000 |
Typical Fall Time (ns)
|
46 |
Typical Rise Time (ns)
|
53 |
Typical Turn-Off Delay Time (ns)
|
136 |
Typical Turn-On Delay Time (ns)
|
38.5 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
D2PAK |
Pin Count
|
3 |
Standard Package Method
|
TO-263 |
Terminal Form
|
Surface Mount |
Package Height
|
4.45 |
Package Length
|
10.03 |
Package Width
|
9.14 |
PCB changed
|
2 |