EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
HTS
|
8541.10.00.80 |
Automotive
|
Unknown |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
TrenchFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±12 |
Maximum Gate Threshold Voltage (V)
|
1.4 |
Maximum Continuous Drain Current (A)
|
1.7 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
55@10V |
Typical Gate Charge @ Vgs (nC)
|
10@10V |
Typical Gate Charge @ 10V (nC)
|
10 |
Typical Input Capacitance @ Vds (pF)
|
235@15V |
Maximum Power Dissipation (mW)
|
350 |
Typical Fall Time (ns)
|
2.5 |
Typical Rise Time (ns)
|
1.5 |
Typical Turn-Off Delay Time (ns)
|
17.5 |
Typical Turn-On Delay Time (ns)
|
3.5 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
SC-70 |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
0.9 |
Package Length
|
2.1 |
Package Width
|
1.3 |